This situation is called thermal runaway, in transistors. The process gets into a kind of chain reaction heating the device rapidly until the device becomes too hot to sustain and gets permanently damaged. Moreover, BJTs have a negative temperature coefficient characteristic which force them to increase their rate of conduction proportionately as their case temperature increases.Īs its case temperature tends to increase, the current through the transistor also increases, which forces the device to heat up further. And that's why we install heatsinks on them to maintain the above criterion. What is "Thermal Runaway" in BJTsĪs per their specs, transistors (BJTs) need to be operated under reasonably cooler conditions, so that their power dissipation does not exceed the maximum specified value. Though using single BJTs is relatively easier, connecting them in parallel needs some attention due to the one significant drawback with transistor characteristics. Therefore it becomes necessary to connect theses devices in parallel. Normally, single BJTs become sufficient for getting moderate output current, however when higher output current is required, it becomes necessary to add more number of these devices together. These stages primarily may consist of power devices like the power BJTs or MOSFETs. This usually is not possible using single transistors, and requires many of them to be connected in parallel. This involves creating a power stage that can handle high power with least effort. While making power electronic circuits, configuring the power output stage correctly becomes very crucial.
#How to connect the 2n3055 transistor how to#
In this post we will learn how to safely connect multiple transistors in parallel, these can be BJTs or mosfets, we will discuss both.